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2SC4132T100R Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
2SC4132T100RROHM1067Yes

2SC4132T100R** is a high-frequency NPN transistor manufactured by **ROHM Semiconductor**.

The 2SC4132T100R is a high-frequency NPN transistor manufactured by ROHM Semiconductor. Below are its key specifications, descriptions, and features:

Specifications:

  • Type: NPN Bipolar Junction Transistor (BJT)
  • Package: SOT-23 (Miniature Surface Mount)
  • Collector-Base Voltage (VCBO): 50V
  • Collector-Emitter Voltage (VCEO): 50V
  • Emitter-Base Voltage (VEBO): 5V
  • Collector Current (IC): 100mA (max)
  • Power Dissipation (PD): 150mW (max)
  • Transition Frequency (fT): 8GHz (typical)
  • Noise Figure (NF): Low noise characteristics
  • Operating Temperature Range: -55°C to +150°C

Descriptions:

  • Designed for high-frequency amplification in RF and microwave applications.
  • Suitable for low-noise, high-gain circuits such as VHF/UHF amplifiers and wireless communication systems.
  • Compact SOT-23 package enables space-saving PCB designs.

Features:

  • High fT (8GHz) for excellent high-frequency performance.
  • Low noise figure for improved signal integrity.
  • Small form factor (SOT-23) for compact designs.
  • Reliable performance in RF and analog circuits.

This transistor is commonly used in RF amplifiers, oscillators, and communication modules. For exact application details, refer to ROHM’s official datasheet.

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