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2SD1763F Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
2SD1763FROHM3000Yes

Part Number:** 2SD1763F **Manufacturer:** ROHM ### **Specifications:** - **Transistor Type:** NPN Bipolar Junction Transistor (BJT) - **Collector-Base Voltage (VCBO):** 60V - **Collector-Emitter Voltage (VCEO):** 50V - **Emitter-Base Voltag

Part Number: 2SD1763F

Manufacturer: ROHM

Specifications:

  • Transistor Type: NPN Bipolar Junction Transistor (BJT)
  • Collector-Base Voltage (VCBO): 60V
  • Collector-Emitter Voltage (VCEO): 50V
  • Emitter-Base Voltage (VEBO): 5V
  • Collector Current (IC): 3A
  • Collector Dissipation (PC): 1W
  • DC Current Gain (hFE): 120 to 400 (at IC = 0.5A, VCE = 5V)
  • Operating Junction Temperature (Tj): -55°C to +150°C
  • Package: TO-252 (DPAK)

Descriptions:

The 2SD1763F is a high-voltage NPN power transistor designed for general-purpose amplification and switching applications. It features a low saturation voltage and high current gain, making it suitable for power management circuits.

Features:

  • High current capability (3A)
  • Low saturation voltage
  • High DC current gain (hFE)
  • Compact and efficient TO-252 (DPAK) package
  • Suitable for power amplification and switching circuits

For detailed application guidelines, refer to the official ROHM datasheet.

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