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2SD1767-T100R Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
2SD1767-T100RROHM1000Yes

Part Number:** 2SD1767-T100R **Manufacturer:** ROHM ### **Specifications:** - **Transistor Type:** NPN Bipolar Junction Transistor (BJT) - **Collector-Emitter Voltage (VCEO):** 120V - **Collector Current (IC):** 3A - **Power Dissipation (PD

Part Number: 2SD1767-T100R

Manufacturer: ROHM

Specifications:

  • Transistor Type: NPN Bipolar Junction Transistor (BJT)
  • Collector-Emitter Voltage (VCEO): 120V
  • Collector Current (IC): 3A
  • Power Dissipation (PD): 1W
  • DC Current Gain (hFE): 120 to 400 (at IC = 1A, VCE = 5V)
  • Collector-Base Voltage (VCBO): 120V
  • Emitter-Base Voltage (VEBO): 5V
  • Transition Frequency (fT): 150MHz
  • Package: TO-252 (DPAK)
  • Operating Temperature Range: -55°C to +150°C

Descriptions:

The 2SD1767-T100R is a high-voltage NPN transistor designed for general-purpose amplification and switching applications. It features a high current gain and fast switching speed, making it suitable for power management and driver circuits.

Features:

  • High voltage capability (VCEO = 120V)
  • High current gain (hFE = 120–400)
  • Low saturation voltage
  • Fast switching speed
  • Compact DPAK package for efficient heat dissipation
  • Pb-free and RoHS compliant

This transistor is commonly used in power supply circuits, motor control, and audio amplifiers.

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