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2SD1963-Q.R Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
2SD1963-Q.RROHM143Yes

2SD1963-Q.

The 2SD1963-Q.R is a PNP silicon epitaxial planar transistor manufactured by ROHM Semiconductor. Below are its specifications, descriptions, and features based on factual data:

Specifications:

  • Transistor Type: PNP
  • Maximum Collector-Base Voltage (VCBO): -50V
  • Maximum Collector-Emitter Voltage (VCEO): -50V
  • Maximum Emitter-Base Voltage (VEBO): -5V
  • Collector Current (IC): -3A
  • Total Power Dissipation (PT): 20W
  • Junction Temperature (Tj): 150°C
  • Storage Temperature (Tstg): -55°C to +150°C
  • DC Current Gain (hFE): 120 to 400 (at VCE = -5V, IC = -0.5A)
  • Transition Frequency (fT): 100MHz (Typical)

Description:

The 2SD1963-Q.R is a high-voltage, medium-power PNP transistor designed for general-purpose amplification and switching applications. It features low saturation voltage and high current gain, making it suitable for use in power control circuits, motor drivers, and audio amplifiers.

Features:

  • High Voltage Capability (VCEO = -50V)
  • High Current Capacity (IC = -3A)
  • Low Saturation Voltage (VCE(sat) = -0.5V max at IC = -1.5A, IB = -0.15A)
  • High DC Current Gain (hFE) for improved efficiency
  • Epitaxial Planar Structure for reliability
  • Pb-Free & RoHS Compliant

Package:

  • TO-252 (DPAK) surface-mount package

This transistor is commonly used in power management circuits, DC-DC converters, and other electronic systems requiring efficient switching or amplification.

For detailed electrical characteristics and application notes, refer to the official ROHM datasheet.

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