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BD4525G-TR Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
BD4525G-TRROHM300Yes

BD4525G-TR is a PNP bipolar junction transistor (BJT) manufactured by ROHM Semiconductor.

The BD4525G-TR is a PNP bipolar junction transistor (BJT) manufactured by ROHM Semiconductor. Below are its key specifications, descriptions, and features:

Specifications:

  • Transistor Type: PNP
  • Collector-Base Voltage (VCBO): -50V
  • Collector-Emitter Voltage (VCEO): -50V
  • Emitter-Base Voltage (VEBO): -5V
  • Collector Current (IC): -2A
  • Power Dissipation (Pc): 1W
  • DC Current Gain (hFE): 60 to 320 (at IC = -500mA, VCE = -5V)
  • Operating Temperature Range: -55°C to +150°C
  • Package Type: SSOP5 (Mini Surface-Mount Package)

Descriptions:

The BD4525G-TR is a high-voltage PNP transistor designed for general-purpose amplification and switching applications. It features low saturation voltage and high current capability, making it suitable for power management and driver circuits.

Features:

  • High voltage and current handling
  • Low saturation voltage (VCE(sat) = -0.5V max at IC = -500mA, IB = -50mA)
  • Compact SSOP5 package for space-saving designs
  • Suitable for switching and amplification in power circuits

This transistor is commonly used in power supplies, motor control, and audio amplification circuits.

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