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BU2300A Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
BU2300AROHM350Yes

BU2300A is a power MOSFET manufactured by ROHM Semiconductor.

The BU2300A is a power MOSFET manufactured by ROHM Semiconductor. Below are its key specifications, descriptions, and features:

Specifications:

  • Type: N-Channel Power MOSFET
  • Drain-Source Voltage (VDSS): 30V
  • Continuous Drain Current (ID): 12A
  • Pulsed Drain Current (IDM): 48A
  • Power Dissipation (PD): 30W
  • Gate-Source Voltage (VGS): ±20V
  • On-Resistance (RDS(ON)): 30mΩ (max) at VGS = 10V
  • Threshold Voltage (VGS(th)): 1.0V (min) – 2.5V (max)
  • Input Capacitance (Ciss): 1000pF (typ)
  • Output Capacitance (Coss): 300pF (typ)
  • Reverse Transfer Capacitance (Crss): 50pF (typ)
  • Turn-On Delay Time (td(on)): 10ns (typ)
  • Turn-Off Delay Time (td(off)): 35ns (typ)
  • Package: TO-252 (DPAK)

Description:

The BU2300A is a high-performance N-channel MOSFET designed for power switching applications. It features low on-resistance, fast switching speeds, and high current handling capability, making it suitable for DC-DC converters, motor control, and power management circuits.

Features:

  • Low on-resistance (RDS(ON)) for reduced conduction losses
  • Fast switching performance for improved efficiency
  • High current handling capability
  • Low threshold voltage for compatibility with logic-level drive circuits
  • Robust and reliable construction
  • Lead-free and RoHS compliant

This information is based on ROHM's official datasheet for the BU2300A. For detailed application notes and performance curves, refer to the manufacturer's documentation.

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