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BU2302 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
BU2302ROHM300Yes

Manufacturer:** ROHM Semiconductor **Part Number:** BU2302 ### **Specifications:** - **Type:** Bipolar Junction Transistor (BJT) - **Polarity:** PNP - **Maximum Collector-Emitter Voltage (VCEO):** -50V - **Maximum Collector Current (IC):**

Manufacturer: ROHM Semiconductor

Part Number: BU2302

Specifications:

  • Type: Bipolar Junction Transistor (BJT)
  • Polarity: PNP
  • Maximum Collector-Emitter Voltage (VCEO): -50V
  • Maximum Collector Current (IC): -500mA
  • Power Dissipation (PD): 500mW
  • DC Current Gain (hFE): 120 to 400 (at IC = -100mA, VCE = -5V)
  • Operating Temperature Range: -55°C to +150°C
  • Package: SOT-23 (Miniature Surface Mount)

Descriptions:

The BU2302 is a PNP bipolar transistor designed for general-purpose amplification and switching applications. It is housed in a compact SOT-23 package, making it suitable for space-constrained designs.

Features:

  • Low saturation voltage for efficient switching
  • High current gain (hFE) for improved amplification
  • Compact SOT-23 package for space-saving PCB layouts
  • Suitable for low-power applications in consumer electronics and industrial circuits

This transistor is commonly used in signal amplification, driver circuits, and switching applications.

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