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ICP-N38 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
ICP-N38ROHM720Yes

ICP-N38** is a **NPN silicon phototransistor** manufactured by **ROHM Semiconductor**.

The ICP-N38 is a NPN silicon phototransistor manufactured by ROHM Semiconductor.

Specifications:

  • Type: NPN Phototransistor
  • Package: Through-hole (3-pin)
  • Spectral Response Range: Near-infrared (NIR)
  • Collector-Emitter Voltage (VCEO): 30V (max)
  • Collector Current (IC): 20mA (max)
  • Power Dissipation (PD): 100mW (max)
  • Peak Wavelength (λp): 940nm
  • Dark Current (ID): 100nA (max) at VCE = 5V
  • Light Current (IL): 0.5mA (min) at Ee = 1mW/cm², VCE = 5V
  • Operating Temperature Range: -25°C to +85°C

Descriptions:

The ICP-N38 is a high-sensitivity NPN phototransistor designed for infrared detection applications. It is commonly used in light sensors, optical switches, and remote control receivers due to its fast response and reliable performance.

Features:

  • High photosensitivity in the near-infrared range
  • Low dark current for improved signal-to-noise ratio
  • Compact and easy-to-use through-hole package
  • Suitable for IR remote control and optical sensing applications
  • Compatible with automated assembly processes

For exact technical details, always refer to the official ROHM datasheet.

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