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RSM002N06MGT2L Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
RSM002N06MGT2LROHM8000Yes

Manufacturer:** ROHM **Part Number:** RSM002N06MGT2L ### **Specifications:** - **Type:** N-channel MOSFET - **Drain-Source Voltage (VDSS):** 60V - **Continuous Drain Current (ID):** 2A - **On-Resistance (RDS(on)<

Manufacturer: ROHM

Part Number: RSM002N06MGT2L

Specifications:

  • Type: N-channel MOSFET
  • Drain-Source Voltage (VDSS): 60V
  • Continuous Drain Current (ID): 2A
  • On-Resistance (RDS(on)): 60mΩ (max) @ VGS = 10V
  • Gate-Source Voltage (VGS): ±20V
  • Power Dissipation (PD): 1.5W
  • Package: SOP-8 (Small Outline Package)
  • Operating Temperature Range: -55°C to +150°C

Descriptions:

The RSM002N06MGT2L is a low on-resistance N-channel MOSFET designed for power switching applications. It offers high efficiency and reliability in a compact SOP-8 package.

Features:

  • Low on-resistance for reduced power loss
  • Fast switching performance
  • High voltage tolerance (60V)
  • Compact SOP-8 package for space-saving designs
  • Suitable for power management and switching circuits

This MOSFET is commonly used in DC-DC converters, motor control, and other power applications.

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