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RSS070N05TB Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
RSS070N05TBROHM2466Yes

RSS070N05TB** is a power MOSFET manufactured by **ROHM Semiconductor**.

The RSS070N05TB is a power MOSFET manufactured by ROHM Semiconductor. Below are its key specifications, descriptions, and features:

Specifications:

  • Type: N-channel MOSFET
  • Drain-Source Voltage (VDSS): 50V
  • Continuous Drain Current (ID): 70A
  • Pulsed Drain Current (IDM): 280A
  • Power Dissipation (PD): 100W
  • Gate-Source Voltage (VGS): ±20V
  • On-Resistance (RDS(on)): 7.0mΩ (max) at VGS = 10V
  • Threshold Voltage (VGS(th)): 1.0V (min) to 2.5V (max)
  • Package: TO-263 (D2PAK)

Descriptions:

  • Designed for high-current, low-loss switching applications.
  • Suitable for power management, motor control, and DC-DC converters.
  • Features low on-resistance for improved efficiency.

Features:

  • Low RDS(on) for reduced conduction losses.
  • Fast switching speed for high-frequency applications.
  • Avalanche energy rated for robustness.
  • Lead-free and RoHS compliant.

This MOSFET is optimized for high-efficiency power switching in industrial and automotive applications.

(Note: Always refer to the official datasheet for detailed electrical characteristics and application guidelines.)

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