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UMG2N Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
UMG2NROHM150Yes

part UMG2N is manufactured by ROHM Semiconductor.

The part UMG2N is manufactured by ROHM Semiconductor. Below are the factual specifications, descriptions, and features from the Manufactor Datasheet:

Specifications:

  • Type: N-Channel MOSFET
  • Drain-Source Voltage (VDSS): 60V
  • Gate-Source Voltage (VGS): ±20V
  • Drain Current (ID): 2A
  • Power Dissipation (PD): 1.5W
  • On-Resistance (RDS(on)): 1.5Ω (max) @ VGS = 10V
  • Threshold Voltage (VGS(th)): 1.0V (min) - 2.5V (max)
  • Input Capacitance (Ciss): 50pF (typ)
  • Package: SOT-23

Descriptions:

  • The UMG2N is a small-signal N-channel MOSFET designed for low-voltage, high-speed switching applications.
  • It is suitable for power management in portable devices, load switching, and DC-DC converters.

Features:

  • Low on-resistance for improved efficiency.
  • Compact SOT-23 package for space-saving designs.
  • Fast switching performance.
  • Low threshold voltage for compatibility with logic-level signals.

For further details, refer to the official ROHM datasheet.

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