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2SB564A Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
2SB564ASAMSUNG1170Yes

2SB564A** is a PNP bipolar junction transistor (BJT) manufactured by **SAMSUNG**.

The 2SB564A is a PNP bipolar junction transistor (BJT) manufactured by SAMSUNG. Below are its specifications, descriptions, and features based on available data:

Specifications:

  • Transistor Type: PNP
  • Maximum Collector-Base Voltage (VCBO): -60V
  • Maximum Collector-Emitter Voltage (VCEO): -50V
  • Maximum Emitter-Base Voltage (VEBO): -5V
  • Collector Current (IC): -3A
  • Power Dissipation (PC): 25W
  • DC Current Gain (hFE): 60 ~ 320 (depending on operating conditions)
  • Transition Frequency (fT): 10MHz (typical)
  • Operating Temperature Range: -55°C to +150°C
  • Package Type: TO-220 (plastic-molded)

Description:

The 2SB564A is a high-power PNP transistor designed for general-purpose amplification and switching applications. It is suitable for use in power supplies, audio amplifiers, and motor control circuits due to its high current and voltage ratings.

Features:

  • High current capability (up to 3A)
  • Low saturation voltage for efficient switching
  • Complementary NPN pair: 2SD438A (if applicable)
  • Robust TO-220 package for effective heat dissipation
  • Wide operating temperature range for industrial applications

This transistor is commonly used in power management circuits and other high-current applications where reliable performance is required.

(Note: Always refer to the official datasheet for precise details before implementation.)

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