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K4T1G164QF-BCE6 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
K4T1G164QF-BCE6SAMSUNG3237Yes

K4T1G164QF-BCE6** is a DDR2 SDRAM memory chip manufactured by **Samsung**.

The K4T1G164QF-BCE6 is a DDR2 SDRAM memory chip manufactured by Samsung. Below are its key specifications, descriptions, and features:

Specifications:

  • Memory Type: DDR2 SDRAM
  • Density: 1Gb (128M x 8)
  • Organization: 128M words × 8 bits
  • Voltage: 1.8V ± 0.1V
  • Speed: 800 Mbps (PC2-6400)
  • Package: FBGA (Fine-Pitch Ball Grid Array)
  • Operating Temperature: Commercial (0°C to 85°C)
  • Refresh: 8K refresh cycles (64ms)
  • Burst Length: 4 or 8 (programmable)
  • CAS Latency (CL): 4, 5, 6 (programmable)
  • Interface: SSTL_18 (1.8V)

Descriptions:

  • The K4T1G164QF-BCE6 is a high-speed, low-power DDR2 memory chip designed for computing and embedded applications.
  • It supports Double Data Rate (DDR2) architecture, enabling high bandwidth performance.
  • The chip operates at 800 MHz (400 MHz clock frequency), ensuring efficient data transfer.
  • It is commonly used in desktops, laptops, servers, and networking equipment.

Features:

  • Low Power Consumption: 1.8V operation reduces power usage.
  • On-Die Termination (ODT): Improves signal integrity.
  • Programmable CAS Latency: Supports CL4, CL5, and CL6.
  • Auto Precharge & Self-Refresh: Enhances power efficiency.
  • FBGA Packaging: Compact and suitable for high-density applications.

This chip complies with JEDEC DDR2 standards and is optimized for performance and reliability.

Would you like additional details on pin configurations or timing parameters?

# Technical Analysis of K4T1G164QF-BCE6 DDR2 SDRAM

## 1. Practical Application Scenarios

The K4T1G164QF-BCE6 is a 1Gb (128M x 8) DDR2 SDRAM from Samsung, optimized for high-speed, low-power applications. Its primary use cases include:

  • Embedded Systems: Ideal for industrial automation, medical devices, and IoT edge computing due to its low power consumption (1.8V operation) and reliable performance in extended temperature ranges.
  • Networking Equipment: Used in routers, switches, and base stations where high bandwidth (up to 800 Mbps/pin) and low latency are critical.
  • Consumer Electronics: Found in smart TVs, set-top boxes, and gaming consoles requiring stable memory performance under varying workloads.
  • Automotive Infotainment: Supports real-time data processing in dashboards and ADAS (Advanced Driver Assistance Systems), provided operating conditions meet AEC-Q100 compliance (though this specific variant may require qualification).

The device’s 4-bank architecture and CAS latency (3-5 cycles) make it suitable for applications balancing throughput and power efficiency.

## 2. Common Design-Phase Pitfalls and Avoidance Strategies

Signal Integrity Issues

  • Pitfall: DDR2’s high-speed operation makes it susceptible to noise, crosstalk, and reflections, leading to timing violations.
  • Solution:
  • Use controlled impedance traces (50–60 Ω) with length matching (±50 mil tolerance).
  • Implement proper termination (ODT or external resistors) to minimize reflections.

Power Supply Noise

  • Pitfall: Voltage ripple exceeding 5% of VDD (1.8V) can cause data corruption.
  • Solution:
  • Place decoupling capacitors (0.1 µF and 10 µF) near the power pins.
  • Use a low-ESR power delivery network (PDN) with dedicated planes.

Thermal Management

  • Pitfall: Sustained high throughput can lead to thermal throttling in confined spaces.
  • Solution:
  • Ensure adequate airflow or heatsinking if ambient temperatures exceed 85°C.
  • Monitor junction temperature in automotive/industrial applications.

Incorrect Initialization

  • Pitfall: Skipping or misconfiguring the EMRS/MRS registers during boot can cause unstable operation.
  • Solution:
  • Follow Samsung’s initialization sequence strictly, including DLL reset and calibration.

## 3. Key Technical Considerations for Implementation

  • Clock Timing: Ensure clock skew between CK and CK# is <10% of the cycle time. Differential pairs must be routed symmetrically.
  • Burst Length: Configure burst length (4 or 8) based on application needs; longer bursts improve sequential access efficiency.
  • Refresh Requirements: DDR2 requires periodic refresh cycles (7.8 µs standard). Missed refreshes lead to data loss—ensure controller compliance.
  • PCB Layout: Place the K4T1G164QF-BCE6 within 2 inches of the controller to minimize propagation delays. Avoid vias in data lines where possible.

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