Professional IC Distribution & Technical Solutions

Part Number: KS9211B

Manufacturer: Samsung

Specifications:

• Type: NAND Flash Memory
• Density: 1Gb (128MB)
• Interface: Asynchronous
• Organization:
• 128M x 8 bits
• 64M x 16 bits
• Supply Voltage:
• VCC: 2.7V - 3.6V
• Operating Temperature Range:
• Commercial: 0°C to +70°C
• Industrial: -40°C to +85°C
• Page Size: 512 + 16 bytes (Spare Area)
• Block Size: 16KB + 512 bytes
• Erase/Program Time:
• Block Erase: 2ms (typical)
• Page Program: 200µs (typical)
• Endurance: 100,000 program/erase cycles (minimum)
• Data Retention: 10 years (minimum)

Descriptions:

The KS9211B is a 1Gb NAND Flash memory device from Samsung, designed for high-performance data storage applications. It features an asynchronous interface and supports both x8 and x16 configurations. The device is optimized for fast read/write operations and is commonly used in embedded systems, consumer electronics, and industrial applications.

Features:

• High-Speed Performance: Fast page program and block erase operations.
• ECC (Error Correction Code) Support: Built-in for data reliability.
• Power-On Reset (POR): Ensures stable initialization.
• Command/Address/Data Multiplexed I/O: Reduces pin count.
• Auto Block Erase & Program: Simplifies operation.
• Compatible with JEDEC Standards: Ensures industry-wide interoperability.

This device is suitable for applications requiring reliable, high-density non-volatile storage.