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LM2000 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
LM2000SAMSUNG330Yes

LM2000** is a **Samsung**-manufactured **RF Power Transistor** designed for **L-band applications**.

The LM2000 is a Samsung-manufactured RF Power Transistor designed for L-band applications. Below are its key specifications, descriptions, and features:

Specifications:

  • Frequency Range: 1.0 GHz to 2.0 GHz (L-band)
  • Output Power: 2000W (PEP)
  • Gain: ≥ 10 dB
  • Efficiency: ≥ 60%
  • Drain-Source Voltage (VDS): 50V
  • Drain Current (ID): 40A
  • Package Type: Flange-mounted
  • Operating Temperature: -40°C to +85°C

Descriptions:

  • Designed for high-power RF amplification in L-band applications, such as radar, communication systems, and broadcasting.
  • Utilizes advanced GaN (Gallium Nitride) technology for high efficiency and reliability.
  • Suitable for pulsed and continuous-wave (CW) operation.

Features:

  • High Power Output: Capable of delivering 2000W peak envelope power (PEP).
  • High Efficiency: Optimized for ≥ 60% power-added efficiency (PAE).
  • Wideband Performance: Operates across 1.0 GHz to 2.0 GHz.
  • Robust Thermal Management: Designed for high thermal stability in demanding environments.
  • Reliable GaN Technology: Ensures long-term durability and performance.

This transistor is commonly used in military, aerospace, and industrial RF applications requiring high-power amplification.

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