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2SC2960F-SPA Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
2SC2960F-SPASANYO500Yes

2SC2960F-SPA** is a high-voltage NPN bipolar junction transistor (BJT) manufactured by **SANYO**.

The 2SC2960F-SPA is a high-voltage NPN bipolar junction transistor (BJT) manufactured by SANYO. Below are its key specifications, descriptions, and features:

Specifications:

  • Transistor Type: NPN
  • Maximum Collector-Base Voltage (VCB): 1500V
  • Maximum Collector-Emitter Voltage (VCE): 800V
  • Maximum Emitter-Base Voltage (VEB): 7V
  • Collector Current (IC): 5A
  • Power Dissipation (PD): 50W
  • DC Current Gain (hFE): 8 to 40 (at VCE = 5V, IC = 2A)
  • Operating Junction Temperature (Tj): -55°C to +150°C
  • Package Type: TO-3P

Descriptions:

  • Designed for high-voltage switching and amplification applications.
  • Suitable for use in power supplies, inverters, and industrial equipment.
  • Features a rugged construction for reliable performance in demanding environments.

Features:

  • High Breakdown Voltage: Supports up to 1500V (VCB).
  • High Current Capability: Handles up to 5A collector current.
  • Low Saturation Voltage: Ensures efficient switching performance.
  • Robust Package: TO-3P package provides good thermal dissipation.

This transistor is optimized for high-voltage, high-power applications where reliability and durability are critical.

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