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2SA1207S Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
2SA1207SSANYO596Yes

2SA1207S** is a PNP silicon epitaxial planar transistor manufactured by **SANYO**.

The 2SA1207S is a PNP silicon epitaxial planar transistor manufactured by SANYO. Below are its key specifications, descriptions, and features:

Specifications:

  • Transistor Type: PNP
  • Maximum Collector-Base Voltage (VCBO): -50V
  • Maximum Collector-Emitter Voltage (VCEO): -50V
  • Maximum Emitter-Base Voltage (VEBO): -5V
  • Collector Current (IC): -1A
  • Total Power Dissipation (PT): 1W
  • Junction Temperature (Tj): 150°C
  • Storage Temperature (Tstg): -55°C to +150°C
  • DC Current Gain (hFE): 120 to 400 (at IC = -100mA, VCE = -5V)
  • Transition Frequency (fT): 100MHz (Typical)

Descriptions:

  • Designed for general-purpose amplification and switching applications.
  • Epitaxial planar construction ensures high reliability and performance.
  • Suitable for low to medium power circuits.

Features:

  • High DC Current Gain (hFE) for efficient signal amplification.
  • Low Saturation Voltage for improved switching performance.
  • Compact Package (TO-92ML) for space-saving PCB designs.
  • Wide Operating Temperature Range for versatile applications.

This transistor is commonly used in audio amplifiers, driver circuits, and other electronic control systems. Always refer to the official datasheet for detailed application guidelines.

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