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2SC668 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
2SC668SANYO1000Yes

2SC668** is a high-frequency NPN bipolar junction transistor (BJT) manufactured by **SANYO**.

The 2SC668 is a high-frequency NPN bipolar junction transistor (BJT) manufactured by SANYO. Below are its key specifications, descriptions, and features:

Specifications:

  • Transistor Type: NPN
  • Maximum Collector-Base Voltage (VCBO): 30V
  • Maximum Collector-Emitter Voltage (VCEO): 25V
  • Maximum Emitter-Base Voltage (VEBO): 5V
  • Maximum Collector Current (IC): 0.7A
  • Maximum Power Dissipation (Ptot): 0.5W
  • Transition Frequency (fT): 150MHz (typical)
  • DC Current Gain (hFE): 120 - 820 (depending on operating conditions)
  • Operating Temperature Range: -55°C to +150°C

Descriptions:

  • Designed for high-frequency amplification and switching applications.
  • Suitable for use in RF circuits, audio amplifiers, and general-purpose electronic circuits.
  • Encased in a TO-92 package for easy mounting.

Features:

  • Low noise performance for signal amplification.
  • High current gain (hFE) for efficient signal processing.
  • Fast switching speed, making it useful for RF and oscillator circuits.

This transistor is commonly used in consumer electronics, communication devices, and small-signal amplification circuits.

(Note: Always verify datasheet details for exact application-specific parameters.)

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