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2SJ189-TL Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
2SJ189-TLSANYO268Yes

2SJ189-TL** is a P-channel MOSFET manufactured by **SANYO Semiconductor (now part of ON Semiconductor)**.

The 2SJ189-TL is a P-channel MOSFET manufactured by SANYO Semiconductor (now part of ON Semiconductor). Below are the factual specifications, descriptions, and features:

Specifications:

  • Type: P-Channel MOSFET
  • Drain-Source Voltage (VDSS): -30V
  • Gate-Source Voltage (VGS): ±20V
  • Drain Current (ID): -5A
  • Power Dissipation (PD): 30W
  • On-Resistance (RDS(on)): 0.15Ω (max) at VGS = -10V
  • Threshold Voltage (VGS(th)): -1.0V to -3.0V
  • Input Capacitance (Ciss): 400pF (typ)
  • Package: TO-220AB

Descriptions:

  • Designed for power switching applications in circuits requiring P-channel MOSFETs.
  • Suitable for DC-DC converters, motor control, and power management applications.
  • Features low on-resistance for efficient power handling.

Features:

  • Low RDS(on) for reduced conduction losses.
  • Fast switching speed for improved efficiency.
  • High power dissipation capability (30W).
  • Robust construction in a TO-220AB package for thermal management.

This MOSFET is optimized for high-performance switching in various electronic circuits. For detailed application notes, refer to the official datasheet.

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