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3SK181 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
3SK181SANYO1571Yes

SANYO part 3SK181** is a **dual-gate MOSFET transistor** designed for high-frequency applications, particularly in RF (radio frequency) circuits.

The SANYO part 3SK181 is a dual-gate MOSFET transistor designed for high-frequency applications, particularly in RF (radio frequency) circuits.

Specifications:

  • Type: N-channel dual-gate MOSFET
  • Maximum Drain-Source Voltage (VDS): 20V
  • Maximum Gate-Source Voltage (VGS): ±8V
  • Maximum Drain Current (ID): 30mA
  • Power Dissipation (PD): 200mW
  • Input Capacitance (Ciss): ~2.5pF (typical)
  • Transition Frequency (fT): ~1000MHz
  • Package: TO-72 (metal can package)

Descriptions & Features:

  • Designed for VHF/UHF amplifier and mixer applications
  • Low noise figure, making it suitable for RF signal processing
  • High gain and excellent linearity
  • Dual-gate structure allows for better control in RF circuits
  • Used in TV tuners, communication receivers, and RF amplifiers

This component is now considered obsolete, but it was widely used in vintage electronics and RF equipment.

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