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A5537N Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
A5537NSANYO100Yes

Part A5537N Manufacturer: SANYO** ### **Specifications:** - **Type:** Bipolar Transistor - **Polarity:** PNP - **Maximum Collector-Emitter Voltage (Vceo):** -30V - **Maximum Collector Current (Ic):** -2A - **Power Dissipation (Pd):** 1W -

Part A5537N Manufacturer: SANYO

Specifications:

  • Type: Bipolar Transistor
  • Polarity: PNP
  • Maximum Collector-Emitter Voltage (Vceo): -30V
  • Maximum Collector Current (Ic): -2A
  • Power Dissipation (Pd): 1W
  • DC Current Gain (hFE): 60-320 (varies by operating conditions)
  • Operating Temperature Range: -55°C to +150°C
  • Package: TO-92 (through-hole)

Descriptions:

The A5537N is a PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. It is commonly used in low-power circuits due to its moderate current and voltage ratings.

Features:

  • High current gain (hFE) range for improved signal amplification.
  • Low saturation voltage for efficient switching.
  • Compact TO-92 package for easy PCB mounting.
  • Reliable performance in various electronic circuits.

This transistor is suitable for audio amplifiers, signal processing, and switching applications. Always refer to the official datasheet for detailed electrical characteristics and operating conditions.

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