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2SA1370-E Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
2SA1370-ESANYO319Yes

2SA1370-E** is a PNP silicon epitaxial planar transistor manufactured by **SANYO**.

The 2SA1370-E is a PNP silicon epitaxial planar transistor manufactured by SANYO. Below are its specifications, descriptions, and features:

Specifications:

  • Transistor Type: PNP
  • Maximum Collector-Base Voltage (VCBO): -50V
  • Maximum Collector-Emitter Voltage (VCEO): -50V
  • Maximum Emitter-Base Voltage (VEBO): -5V
  • Collector Current (IC): -1.5A
  • Total Power Dissipation (PT): 1W
  • Junction Temperature (Tj): 150°C
  • Storage Temperature (Tstg): -55°C to +150°C
  • DC Current Gain (hFE): 60 to 320 (at VCE = -6V, IC = -150mA)
  • Transition Frequency (fT): 100MHz (min)

Descriptions:

  • Designed for general-purpose amplification and switching applications.
  • Suitable for low-frequency and medium-power circuits.
  • Epitaxial planar construction ensures high reliability and performance.

Features:

  • High current capability (up to -1.5A).
  • Low saturation voltage for efficient switching.
  • High DC current gain (hFE) range for improved amplification.
  • Compact TO-92 package for easy PCB mounting.

This transistor is commonly used in audio amplifiers, power regulators, and switching circuits. For detailed application notes, refer to the official SANYO datasheet.

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