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2SD1207-T Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
2SD1207-TSANYO157Yes

2SD1207-T** is a silicon NPN epitaxial planar transistor manufactured by **SANYO**.

The 2SD1207-T is a silicon NPN epitaxial planar transistor manufactured by SANYO.

Specifications:

  • Transistor Type: NPN
  • Collector-Emitter Voltage (VCEO): 50V
  • Collector-Base Voltage (VCBO): 60V
  • Emitter-Base Voltage (VEBO): 5V
  • Collector Current (IC): 3A
  • Power Dissipation (PC): 25W
  • DC Current Gain (hFE): 60 to 320 (depending on conditions)
  • Operating Temperature Range: -55°C to +150°C
  • Package Type: TO-220

Descriptions & Features:

  • Designed for general-purpose amplification and switching applications.
  • High current capability with a maximum collector current of 3A.
  • Suitable for power regulation and driver circuits.
  • Epitaxial planar structure ensures reliability and performance.
  • Low saturation voltage for efficient switching.

This transistor is commonly used in power supply circuits, motor drivers, and audio amplifiers.

(Note: Always refer to the official datasheet for precise electrical characteristics and application guidelines.)

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