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2SD2199S-DL-E Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
2SD2199S-DL-ESANYO288Yes

2SD2199S-DL-E** is a bipolar PNP transistor manufactured by **SANYO**.

The 2SD2199S-DL-E is a bipolar PNP transistor manufactured by SANYO. Below are its key specifications, descriptions, and features:

Specifications:

  • Transistor Type: PNP
  • Collector-Base Voltage (VCBO): -60V
  • Collector-Emitter Voltage (VCEO): -50V
  • Emitter-Base Voltage (VEBO): -5V
  • Collector Current (IC): -3A
  • Power Dissipation (PC): 25W
  • DC Current Gain (hFE): 60 to 320 (depending on conditions)
  • Operating Temperature Range: -55°C to +150°C
  • Package: TO-220F (isolated type)

Descriptions:

  • Designed for general-purpose amplification and switching applications.
  • Suitable for medium-power applications.
  • Features a high current gain and low saturation voltage.

Features:

  • High current capability (up to 3A).
  • Low collector-emitter saturation voltage.
  • Isolated package (TO-220F) for improved thermal performance.
  • Wide range of DC current gain (hFE).

This transistor is commonly used in power supply circuits, motor drivers, and audio amplifiers. Always refer to the official datasheet for detailed electrical characteristics and application guidelines.

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