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VEY07P Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
VEY07PSANYO500Yes

Manufacturer:** SANYO **Part Number:** VEY07P ### **Specifications:** - **Type:** PNP Transistor - **Material:** Silicon (Si) - **Maximum Collector-Base Voltage (VCBO):** -50V - **Maximum Collector-Emitter Voltage (VCEO):** -50V - **Maxi

Manufacturer: SANYO

Part Number: VEY07P

Specifications:

  • Type: PNP Transistor
  • Material: Silicon (Si)
  • Maximum Collector-Base Voltage (VCBO): -50V
  • Maximum Collector-Emitter Voltage (VCEO): -50V
  • Maximum Emitter-Base Voltage (VEBO): -5V
  • Collector Current (IC): -1A
  • Power Dissipation (Pc): 1W
  • DC Current Gain (hFE): 60-320 (depending on operating conditions)
  • Operating Temperature Range: -55°C to +150°C
  • Package: TO-92

Descriptions:

The SANYO VEY07P is a PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. It features moderate current and voltage ratings, making it suitable for low-power circuits.

Features:

  • Low saturation voltage
  • High current gain (hFE)
  • Compact TO-92 package for easy mounting
  • Reliable performance in a wide temperature range

This transistor is commonly used in audio amplifiers, signal processing, and switching circuits.

*(Note: Always refer to the official datasheet for precise technical details before implementation.)*

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