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KM41C1000DZ-6 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
KM41C1000DZ-6SEC720Yes

KM41C1000DZ-6 is a 1M x 4-bit CMOS dynamic RAM (DRAM) manufactured by Samsung Electronics (SEC).

The KM41C1000DZ-6 is a 1M x 4-bit CMOS dynamic RAM (DRAM) manufactured by Samsung Electronics (SEC).

Specifications:

  • Organization: 1,048,576 words × 4 bits
  • Technology: CMOS
  • Access Time: 60 ns
  • Operating Voltage: 5V ±10%
  • Refresh Cycles: 1,024 cycles every 16 ms
  • Package: 20-pin DIP (Dual In-line Package)
  • Operating Temperature Range: 0°C to +70°C

Descriptions:

  • The KM41C1000DZ-6 is a high-speed, low-power DRAM designed for memory applications.
  • It features a fast page mode operation for improved performance.
  • Includes internal refresh circuitry for simplified system design.

Features:

  • Fast Page Mode: Reduces access time for consecutive reads/writes.
  • Single +5V Power Supply: Simplifies power management.
  • Low Power Consumption: Suitable for battery-operated devices.
  • Standard 20-pin DIP Package: Ensures compatibility with existing designs.
  • CAS-before-RAS Refresh: Supports simplified refresh control.

This DRAM is commonly used in older computing systems, embedded applications, and industrial electronics.

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