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S-93C76ADFJ-TB-G Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
S-93C76ADFJ-TB-GSEIKO1832Yes

S-93C76ADFJ-TB-G** is a serial EEPROM (Electrically Erasable Programmable Read-Only Memory) manufactured by **SEIKO**.

The S-93C76ADFJ-TB-G is a serial EEPROM (Electrically Erasable Programmable Read-Only Memory) manufactured by SEIKO. Below are its key specifications, descriptions, and features:

Specifications:

  • Memory Type: 2-Wire Serial EEPROM
  • Density: 8Kbit (1K x 8 or 512 x 16)
  • Interface: I²C-Compatible (2-Wire Serial)
  • Operating Voltage: 1.7V to 5.5V
  • Operating Temperature Range: -40°C to +85°C
  • Write Cycle Endurance: 1,000,000 cycles (typical)
  • Data Retention: 100 years (typical)
  • Page Write Buffer: 16 bytes
  • Package: SOP-8 (150mil)

Descriptions:

  • Low-power CMOS technology
  • Supports sequential read operation
  • Built-in write protection (software & hardware)
  • Self-timed programming cycle

Features:

  • Wide Voltage Operation: Compatible with both 3.3V and 5V systems
  • Low Power Consumption:
  • Standby current: 1μA (typ.)
  • Read current: 0.5mA (typ.)
  • Write current: 3mA (typ.)
  • High Reliability:
  • Built-in noise filter for stable communication
  • Write protect function for data security
  • RoHS Compliant & Halogen-Free

This EEPROM is commonly used in applications requiring non-volatile memory storage, such as automotive, industrial, and consumer electronics.

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