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IR3N06 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
IR3N06SHARP125Yes

IR3N06** is a power MOSFET manufactured by **SHARP**.

The IR3N06 is a power MOSFET manufactured by SHARP. Below are its key specifications, descriptions, and features:

Specifications:

  • Type: N-Channel Power MOSFET
  • Drain-Source Voltage (VDSS): 60V
  • Continuous Drain Current (ID): 3A
  • Pulsed Drain Current (IDM): 12A
  • Gate-Source Voltage (VGS): ±20V
  • Power Dissipation (PD): 25W
  • On-Resistance (RDS(on)): 0.6Ω (max) @ VGS = 10V
  • Threshold Voltage (VGS(th)): 1.0V (min) – 2.5V (max)
  • Input Capacitance (Ciss): 100pF (typical)
  • Operating Temperature Range: -55°C to +150°C

Package:

  • TO-220AB (Through-hole package)

Descriptions & Features:

  • Designed for switching and amplification in power applications.
  • Low on-resistance for improved efficiency.
  • Fast switching speed for high-frequency applications.
  • Avalanche energy rated for rugged performance.
  • Suitable for DC-DC converters, motor control, and power management circuits.

This MOSFET is commonly used in power supply circuits, inverters, and automotive applications due to its reliability and performance.

(Note: Always refer to the official SHARP datasheet for precise details before implementation.)

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