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IR3N32 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
IR3N32SHARP100Yes

IR3N32** is a power MOSFET manufactured by **SHARP**.

The IR3N32 is a power MOSFET manufactured by SHARP. Below are its key specifications, descriptions, and features:

Specifications:

  • Type: N-Channel Power MOSFET
  • Drain-Source Voltage (VDSS): 250V
  • Continuous Drain Current (ID): 3A
  • Power Dissipation (PD): 30W (with heatsink)
  • Gate-Source Voltage (VGS): ±20V
  • On-Resistance (RDS(ON)): 2.5Ω (max) @ VGS = 10V
  • Turn-On Delay Time (td(on)): 10ns (typical)
  • Turn-Off Delay Time (td(off)): 30ns (typical)
  • Operating Temperature Range: -55°C to +150°C

Description:

The IR3N32 is a high-voltage N-Channel MOSFET designed for power switching applications. It provides efficient performance in circuits requiring fast switching and low on-resistance.

Features:

  • High Voltage Capability (250V)
  • Fast Switching Speed
  • Low On-Resistance
  • High Input Impedance
  • Reliable and Robust Construction

This MOSFET is commonly used in power supplies, motor control, and high-frequency switching circuits.

For exact performance characteristics, refer to the official SHARP datasheet.

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