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PQ15RW21J00H Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
PQ15RW21J00HSHARP746Yes

PQ15RW21J00H** is a **SHARP**-manufactured **MOSFET** (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency power switching applications.

The PQ15RW21J00H is a SHARP-manufactured MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency power switching applications.

Specifications:

  • Type: N-Channel MOSFET
  • Drain-Source Voltage (VDSS): 150V
  • Continuous Drain Current (ID): 15A
  • Pulsed Drain Current (IDM): 60A
  • Power Dissipation (PD): 30W
  • Gate-Source Voltage (VGS): ±20V
  • On-Resistance (RDS(ON)): 0.21Ω (max) @ VGS = 10V
  • Input Capacitance (Ciss): 600pF (typical)
  • Output Capacitance (Coss): 150pF (typical)
  • Reverse Transfer Capacitance (Crss): 50pF (typical)
  • Turn-On Delay Time (td(on)): 10ns (typical)
  • Turn-Off Delay Time (td(off)): 30ns (typical)
  • Operating Temperature Range: -55°C to +150°C
  • Package: TO-220F (isolated type)

Descriptions & Features:

  • Low On-Resistance: Ensures minimal power loss and high efficiency.
  • Fast Switching Speed: Suitable for high-frequency applications.
  • Isolated Package (TO-220F): Provides electrical isolation between the MOSFET and heatsink.
  • High Voltage Tolerance: Supports up to 150V drain-source voltage.
  • Robust Thermal Performance: Designed for high-power dissipation.
  • Applications: Used in power supplies, motor control, DC-DC converters, and other switching circuits.

This MOSFET is optimized for high-performance power management in industrial and consumer electronics.

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