The PQ15RW21J00H is a SHARP-manufactured MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency power switching applications.
Specifications:
- Type: N-Channel MOSFET
- Drain-Source Voltage (VDSS): 150V
- Continuous Drain Current (ID): 15A
- Pulsed Drain Current (IDM): 60A
- Power Dissipation (PD): 30W
- Gate-Source Voltage (VGS): ±20V
- On-Resistance (RDS(ON)): 0.21Ω (max) @ VGS = 10V
- Input Capacitance (Ciss): 600pF (typical)
- Output Capacitance (Coss): 150pF (typical)
- Reverse Transfer Capacitance (Crss): 50pF (typical)
- Turn-On Delay Time (td(on)): 10ns (typical)
- Turn-Off Delay Time (td(off)): 30ns (typical)
- Operating Temperature Range: -55°C to +150°C
- Package: TO-220F (isolated type)
Descriptions & Features:
- Low On-Resistance: Ensures minimal power loss and high efficiency.
- Fast Switching Speed: Suitable for high-frequency applications.
- Isolated Package (TO-220F): Provides electrical isolation between the MOSFET and heatsink.
- High Voltage Tolerance: Supports up to 150V drain-source voltage.
- Robust Thermal Performance: Designed for high-power dissipation.
- Applications: Used in power supplies, motor control, DC-DC converters, and other switching circuits.
This MOSFET is optimized for high-performance power management in industrial and consumer electronics.