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S11MD5T Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
S11MD5TSHARP2275Yes

SHARP S11MD5T** is a **P-channel MOSFET** designed for various power management applications.

The SHARP S11MD5T is a P-channel MOSFET designed for various power management applications. Below are its key specifications, descriptions, and features:

Specifications:

  • Type: P-Channel MOSFET
  • Drain-Source Voltage (VDSS): -30V
  • Continuous Drain Current (ID): -11A
  • Power Dissipation (PD): 30W
  • Gate-Source Voltage (VGS): ±20V
  • On-Resistance (RDS(on)): 50mΩ (max) at VGS = -10V
  • Threshold Voltage (VGS(th)): -1.0V to -2.5V
  • Package: TO-252 (DPAK)

Descriptions:

  • Designed for high-efficiency switching in power circuits.
  • Low on-resistance for reduced conduction losses.
  • Suitable for DC-DC converters, motor control, and load switching applications.

Features:

  • Low RDS(on) for improved efficiency.
  • Fast switching speed for high-frequency applications.
  • Compact DPAK package for space-saving designs.
  • Avalanche energy specified for rugged performance.

This MOSFET is commonly used in battery management, power supplies, and automotive electronics.

For detailed electrical characteristics, refer to the official SHARP datasheet.

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