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D3SB60 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
D3SB60SHINDENG232Yes

D3SB60** is a **Silicon Epitaxial Planar Diode** manufactured by **Shindengen Electric Mfg.

The D3SB60 is a Silicon Epitaxial Planar Diode manufactured by Shindengen Electric Mfg. Co., Ltd. Here are its key specifications, descriptions, and features:

Specifications:

  • Type: Fast Recovery Diode
  • Maximum Repetitive Peak Reverse Voltage (VRRM): 600V
  • Average Forward Current (IF(AV)): 3A
  • Peak Forward Surge Current (IFSM): 50A (non-repetitive)
  • Forward Voltage (VF): 1.3V (typical at IF = 3A)
  • Reverse Recovery Time (trr): 150ns (typical)
  • Operating Junction Temperature (Tj): -40°C to +150°C
  • Package: DO-201AD (Axial Lead)

Descriptions:

  • Designed for high-speed switching applications.
  • Features low forward voltage drop and fast recovery time.
  • Suitable for rectification, freewheeling, and snubber circuits.

Features:

  • High reliability with robust construction.
  • Low leakage current in reverse bias.
  • Epitaxial planar structure for improved performance.
  • RoHS compliant (lead-free).

This diode is commonly used in power supplies, inverters, and industrial electronics. For detailed electrical characteristics, refer to the official Shindengen datasheet.

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