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SI4921N Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
SI4921NSI300Yes

SI4921N is a dual N-channel MOSFET manufactured by Vishay Siliconix.

The SI4921N is a dual N-channel MOSFET manufactured by Vishay Siliconix. Below are the factual specifications, descriptions, and features of the SI4921N:

Manufacturer: Vishay Siliconix

Specifications:

  • Drain-Source Voltage (VDSS): 30 V
  • Gate-Source Voltage (VGS): ±20 V
  • Continuous Drain Current (ID): 4.3 A (per MOSFET)
  • Pulsed Drain Current (IDM): 17 A
  • On-Resistance (RDS(ON)):
  • 40 mΩ (max) at VGS = 10 V
  • 50 mΩ (max) at VGS = 4.5 V
  • Power Dissipation (PD): 2 W (per MOSFET)
  • Operating Junction Temperature (TJ): -55°C to +150°C
  • Package: SO-8

Description:

The SI4921N is a dual N-channel MOSFET designed for low-voltage, high-efficiency switching applications. It is commonly used in power management circuits, DC-DC converters, and motor control systems.

Features:

  • Low on-resistance (RDS(ON)) for reduced conduction losses
  • High current handling capability
  • Fast switching performance
  • TrenchFET® technology for improved efficiency
  • Dual N-channel configuration in a single SO-8 package
  • Lead (Pb)-free and RoHS compliant

For detailed application notes or additional technical information, refer to the official Vishay Siliconix datasheet.

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