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SI7703EDN Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
SI7703EDNSI120Yes

Manufacturer:** VISHAY **Part Number:** SI7703EDN ### **Specifications:** - **Type:** N-Channel MOSFET - **Technology:** TrenchFET® Gen III - **Drain-Source Voltage (VDS):** 30 V - **Gate-Source Voltage (VGS):** ±20 V - **Continuous Drai

Manufacturer: VISHAY

Part Number: SI7703EDN

Specifications:

  • Type: N-Channel MOSFET
  • Technology: TrenchFET® Gen III
  • Drain-Source Voltage (VDS): 30 V
  • Gate-Source Voltage (VGS): ±20 V
  • Continuous Drain Current (ID): 30 A
  • Pulsed Drain Current (IDM): 120 A
  • Power Dissipation (PD): 2.5 W
  • On-Resistance (RDS(on)): 4.5 mΩ (max) at VGS = 10 V
  • Gate Charge (Qg): 25 nC (typical)
  • Input Capacitance (Ciss): 1800 pF (typical)
  • Output Capacitance (Coss): 500 pF (typical)
  • Reverse Transfer Capacitance (Crss): 100 pF (typical)
  • Operating Temperature Range: -55°C to +150°C
  • Package: PowerPAK® SO-8

Descriptions and Features:

  • High-performance N-Channel MOSFET optimized for power management applications.
  • Low on-resistance (RDS(on)) for reduced conduction losses.
  • Fast switching performance for improved efficiency.
  • TrenchFET® Gen III technology for enhanced power density and thermal performance.
  • Suitable for DC-DC converters, motor control, and load switching applications.
  • Pb-free and RoHS-compliant.

(Note: Always verify datasheet details for precise application requirements.)

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