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HYB41256-12 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
HYB41256-12SIEMENS175Yes

Manufacturer:** SIEMENS **Part Number:** HYB41256-12 ### **Specifications:** - **Type:** Dynamic RAM (DRAM) - **Density:** 256Kb (32K x 8-bit) - **Access Time:** 120ns - **Operating Voltage:** 5V ±10% - **Package:** 16-pin DIP (Dual In-li

Manufacturer: SIEMENS

Part Number: HYB41256-12

Specifications:

  • Type: Dynamic RAM (DRAM)
  • Density: 256Kb (32K x 8-bit)
  • Access Time: 120ns
  • Operating Voltage: 5V ±10%
  • Package: 16-pin DIP (Dual In-line Package)
  • Refresh Cycles: 512 cycles every 8ms
  • Operating Temperature Range: 0°C to +70°C

Descriptions:

The HYB41256-12 is a high-speed, low-power 256Kb DRAM chip designed for use in memory-intensive applications. It features a 32K x 8-bit organization and is compatible with standard DRAM interfaces.

Features:

  • Fast Access Time: 120ns for efficient data retrieval.
  • Low Power Consumption: Optimized for energy efficiency.
  • Wide Voltage Tolerance: Operates reliably within 5V ±10%.
  • Standard 16-Pin DIP: Easy integration into existing designs.
  • CAS-before-RAS Refresh Support: Simplifies refresh control.
  • TTL-Compatible Inputs/Outputs: Ensures compatibility with standard logic levels.

This DRAM chip is suitable for use in computers, industrial control systems, and other embedded applications requiring reliable volatile memory.

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