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SI2302A2SHB Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
SI2302A2SHBSILICON1568Yes

SI2302A2SHB** is a P-channel MOSFET manufactured by **SILICON**.

The SI2302A2SHB is a P-channel MOSFET manufactured by SILICON. Below are its key specifications, descriptions, and features:

Specifications:

  • Type: P-Channel MOSFET
  • Drain-Source Voltage (VDS): -20V
  • Gate-Source Voltage (VGS): ±12V
  • Continuous Drain Current (ID): -3.7A
  • Pulsed Drain Current (IDM): -15A
  • Power Dissipation (PD): 1.25W
  • On-Resistance (RDS(on)): 85mΩ @ VGS = -4.5V
  • Threshold Voltage (VGS(th)): -0.7V to -1.5V
  • Operating Temperature Range: -55°C to +150°C
  • Package: SOT-23

Descriptions:

  • The SI2302A2SHB is designed for low-voltage, high-efficiency switching applications.
  • It features low on-resistance and fast switching performance.
  • Suitable for power management in portable electronics, battery protection, and load switching.

Features:

  • Low Gate Charge: Enhances switching efficiency.
  • Low Threshold Voltage: Compatible with low-voltage logic circuits.
  • RoHS Compliant: Meets environmental standards.
  • Compact SOT-23 Package: Ideal for space-constrained designs.

For detailed datasheet information, refer to the manufacturer's documentation.

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