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STRD6801 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
STRD6801SK100Yes

STRD6801** is a power MOSFET manufactured by **SK (SK Semiconductor)**.

The STRD6801 is a power MOSFET manufactured by SK (SK Semiconductor). Below are the factual specifications, descriptions, and features:

Specifications:

  • Type: N-Channel Power MOSFET
  • Drain-Source Voltage (VDSS): 60V
  • Continuous Drain Current (ID): 68A
  • Pulsed Drain Current (IDM): 204A
  • Power Dissipation (PD): 200W
  • Gate-Source Voltage (VGS): ±20V
  • On-Resistance (RDS(on)): 5.5mΩ (max) @ VGS = 10V
  • Threshold Voltage (VGS(th)): 2V (min) - 4V (max)
  • Input Capacitance (Ciss): 4000pF (typ)
  • Package: TO-252 (DPAK)

Descriptions:

The STRD6801 is a high-performance N-Channel MOSFET designed for power switching applications. It offers low on-resistance and high current handling, making it suitable for power management in automotive, industrial, and consumer electronics.

Features:

  • Low RDS(on) for reduced conduction losses
  • High current capability
  • Fast switching performance
  • Avalanche energy specified
  • Lead-free and RoHS compliant

For detailed application notes or reliability data, refer to the official SK Semiconductor datasheet.

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