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SST39VF512-90-4C-NH Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
SST39VF512-90-4C-NHSST105Yes

SST39VF512-90-4C-NH** is a **512 Kb (64K x 8) CMOS Multi-Purpose Flash (MPF)** memory device manufactured by **Silicon Storage Technology (SST)**.

The SST39VF512-90-4C-NH is a 512 Kb (64K x 8) CMOS Multi-Purpose Flash (MPF) memory device manufactured by Silicon Storage Technology (SST).

Key Specifications:

  • Density: 512 Kb (64K x 8)
  • Supply Voltage: 2.7V - 3.6V
  • Access Time: 90 ns
  • Operating Current: 15 mA (typical)
  • Standby Current: 5 µA (typical)
  • Sector-Erase Capability: Uniform 4 KByte sectors
  • Block-Erase Capability: 32 KByte or full-chip erase
  • Endurance: 100,000 cycles (minimum)
  • Data Retention: >100 years
  • Package: 32-lead PLCC (Plastic Leaded Chip Carrier)
  • Operating Temperature Range: Commercial (0°C to +70°C)

Features:

  • High-Performance Read Operations:
  • 90 ns access time
  • Low Power Consumption:
  • Active current: 15 mA (typical)
  • Standby current: 5 µA (typical)
  • Flexible Erase Capability:
  • Uniform 4 KByte sector erase
  • 32 KByte block erase
  • Full-chip erase
  • Single Voltage Read/Write Operations:
  • 2.7V - 3.6V for all operations
  • Superior Reliability:
  • Endurance: 100,000 cycles
  • Data retention: >100 years
  • CMOS I/O Compatibility:
  • TTL-compatible inputs and outputs
  • Hardware & Software Data Protection:
  • Sector lock/unlock for security
  • Automated Write Timing:
  • Internal programming & erase algorithms

This device is commonly used in embedded systems, industrial controls, telecommunications, and other applications requiring non-volatile memory storage.

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