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GP3NB60HD Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
GP3NB60HDST488Yes

GP3NB60HD** is a high-voltage, fast-switching NPN transistor manufactured by **STMicroelectronics (ST)**.

The GP3NB60HD is a high-voltage, fast-switching NPN transistor manufactured by STMicroelectronics (ST).

Key Specifications:

  • Transistor Type: NPN Darlington
  • Collector-Emitter Voltage (VCE): 600V
  • Collector Current (IC): 3A
  • Peak Collector Current (ICM): 6A
  • Base-Emitter Voltage (VBE): 5V
  • Power Dissipation (Ptot): 40W
  • DC Current Gain (hFE): 1000 (min)
  • Switching Speed: Fast switching with built-in freewheeling diode
  • Package: TO-220 (isolated tab)

Features:

  • High-voltage capability
  • High current gain
  • Fast switching performance
  • Built-in freewheeling diode for inductive load protection
  • Isolated tab for easier mounting

Applications:

  • Switching power supplies
  • Motor control circuits
  • Inverters
  • Electronic ballasts
  • Industrial and consumer electronics

This transistor is designed for high-voltage, high-speed switching applications with robust performance.

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