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BUZ76A Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
BUZ76AST100Yes

BUZ76A is a power MOSFET manufactured by SIEMENS.

The BUZ76A is a power MOSFET manufactured by SIEMENS. Below are its key specifications:

  • Type: N-channel enhancement mode MOSFET
  • Drain-Source Voltage (VDSS): 60V
  • Continuous Drain Current (ID): 6A
  • Pulsed Drain Current (IDM): 24A
  • Power Dissipation (Ptot): 40W
  • Gate-Source Voltage (VGS): ±20V
  • On-State Resistance (RDS(on)): 0.15Ω (max) at VGS = 10V
  • Threshold Voltage (VGS(th)): 2-4V
  • Input Capacitance (Ciss): 300pF (typical)
  • Output Capacitance (Coss): 100pF (typical)
  • Reverse Transfer Capacitance (Crss): 50pF (typical)
  • Turn-On Delay Time (td(on)): 10ns (typical)
  • Rise Time (tr): 30ns (typical)
  • Turn-Off Delay Time (td(off)): 60ns (typical)
  • Fall Time (tf): 20ns (typical)
  • Package: TO-220AB

These specifications are based on SIEMENS' datasheet for the BUZ76A MOSFET.

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