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SPP03N60C3 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
SPP03N60C3ST 4000Yes

### **SPP03N60C3 Manufacturer: STMicroelectronics** #### **Specifications:** - **Transistor Type:** N-channel MOSFET - **Technology:** Power MOSFET - **Drain-Source Voltage (VDS):** 600 V - **Continuous Drain Current (ID):

SPP03N60C3 Manufacturer: STMicroelectronics

#### Specifications:

  • Transistor Type: N-channel MOSFET
  • Technology: Power MOSFET
  • Drain-Source Voltage (VDS): 600 V
  • Continuous Drain Current (ID): 3 A
  • Pulsed Drain Current (IDM): 12 A
  • Power Dissipation (PD): 38 W
  • Gate-Source Voltage (VGS): ±30 V
  • On-Resistance (RDS(on)): 2.5 Ω (max) at VGS = 10 V
  • Threshold Voltage (VGS(th)): 3 V (min), 5 V (max)
  • Input Capacitance (Ciss): 300 pF (typ)
  • Output Capacitance (Coss): 30 pF (typ)
  • Reverse Transfer Capacitance (Crss): 8 pF (typ)
  • Turn-On Delay Time (td(on)): 10 ns (typ)
  • Turn-Off Delay Time (td(off)): 50 ns (typ)
  • Operating Temperature Range: -55°C to +150°C
  • Package: TO-220

#### Descriptions:

The SPP03N60C3 is an N-channel Power MOSFET from STMicroelectronics, designed for high-voltage, high-speed switching applications. It features low gate charge, fast switching performance, and low on-resistance, making it suitable for power supplies, motor control, and lighting applications.

#### Features:

  • High voltage capability (600 V)
  • Low gate charge for improved switching efficiency
  • Low on-resistance (RDS(on))
  • Fast switching speed
  • Avalanche ruggedness
  • TO-220 package for easy mounting and heat dissipation
  • Suitable for high-efficiency power conversion

This MOSFET is commonly used in offline power supplies, inverters, and other high-voltage switching circuits.

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