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IRF634 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
IRF634ST150Yes

IRF634 is a power MOSFET manufactured by STMicroelectronics (ST).

The IRF634 is a power MOSFET manufactured by STMicroelectronics (ST). Below are the factual specifications, descriptions, and features:

Specifications:

  • Manufacturer: STMicroelectronics (ST)
  • Type: N-Channel Power MOSFET
  • Drain-Source Voltage (VDSS): 250V
  • Continuous Drain Current (ID): 8.1A
  • Pulsed Drain Current (IDM): 32A
  • Power Dissipation (PD): 75W
  • Gate-Source Voltage (VGS): ±20V
  • On-Resistance (RDS(on)): 0.6Ω (max) @ VGS = 10V
  • Threshold Voltage (VGS(th)): 2-4V
  • Input Capacitance (Ciss): 600pF (typical)
  • Package: TO-220

Description:

The IRF634 is a high-voltage N-Channel MOSFET designed for power switching applications. It offers low on-resistance and fast switching performance, making it suitable for power supplies, motor control, and other high-voltage applications.

Features:

  • High Voltage Capability: 250V drain-source voltage rating
  • Low On-Resistance: Minimizes conduction losses
  • Fast Switching: Optimized for high-efficiency applications
  • Avalanche Energy Specified: Enhances ruggedness in inductive load conditions
  • TO-220 Package: Provides efficient thermal dissipation

This information is based on the manufacturer's datasheet. For detailed performance characteristics, refer to the official STMicroelectronics documentation.

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