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13005A Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
13005AST317Yes

Part Number:** 13005A **Manufacturer:** STMicroelectronics ### **Specifications:** - **Transistor Type:** NPN Bipolar Junction Transistor (BJT) - **Package:** TO-220 - **Collector-Emitter Voltage (VCEO):** 400V - **Collector-Base

Part Number: 13005A

Manufacturer: STMicroelectronics

Specifications:

  • Transistor Type: NPN Bipolar Junction Transistor (BJT)
  • Package: TO-220
  • Collector-Emitter Voltage (VCEO): 400V
  • Collector-Base Voltage (VCBO): 700V
  • Emitter-Base Voltage (VEBO): 9V
  • Collector Current (IC): 4A (continuous)
  • Peak Collector Current (ICM): 8A
  • Power Dissipation (Ptot): 75W
  • DC Current Gain (hFE): 8 to 40 (at IC = 2A, VCE = 5V)
  • Transition Frequency (fT): 4MHz
  • Operating Junction Temperature (Tj): -65°C to +150°C
  • Storage Temperature Range: -65°C to +150°C

Description:

The 13005A is a high-voltage NPN power transistor designed for switching and amplification applications. It is commonly used in power supplies, inverters, and electronic ballasts due to its high voltage and current handling capabilities.

Features:

  • High voltage capability
  • Low spread of dynamic parameters
  • High switching speed
  • Low saturation voltage
  • Epitaxial planar die technology for improved performance

The TO-220 package ensures efficient heat dissipation, making it suitable for high-power applications.

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