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P36NE06FP Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
P36NE06FPST273Yes

P36NE06FP** is a power MOSFET manufactured by **STMicroelectronics (ST)**.

The P36NE06FP is a power MOSFET manufactured by STMicroelectronics (ST). Below are the factual specifications, descriptions, and features of the device:

Manufacturer:

STMicroelectronics (ST)

Part Number:

P36NE06FP

Type:

N-Channel Power MOSFET

Key Specifications:

  • Drain-Source Voltage (VDSS): 60V
  • Continuous Drain Current (ID): 36A
  • Pulsed Drain Current (IDM): 144A
  • Power Dissipation (PD): 75W
  • Gate-Source Voltage (VGS): ±20V
  • On-Resistance (RDS(on)):
  • 0.036Ω (max) @ VGS = 10V
  • 0.045Ω (max) @ VGS = 4.5V
  • Threshold Voltage (VGS(th)): 2V (min) to 4V (max)
  • Total Gate Charge (Qg): 60nC (typ)
  • Input Capacitance (Ciss): 1800pF (typ)
  • Output Capacitance (Coss): 400pF (typ)
  • Reverse Transfer Capacitance (Crss): 100pF (typ)

Package:

TO-220FP (Fully Plastic Insulated Package)

Features:

  • Low On-Resistance: Ensures high efficiency in power switching applications.
  • Fast Switching Speed: Suitable for high-frequency applications.
  • Avalanche Rated: Provides robustness in rugged environments.
  • Fully Insulated Package: Eliminates the need for an additional insulating pad in mounting.
  • Logic-Level Gate Drive Compatibility: Can be driven by lower voltage signals (4.5V).

Applications:

  • Power management in DC-DC converters
  • Motor control circuits
  • Switching power supplies
  • Automotive and industrial applications

This information is based on the manufacturer's datasheet and technical documentation. For detailed performance curves and application notes, refer to STMicroelectronics' official resources.

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