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STN1NK60Z Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
STN1NK60ZST4798Yes

STN1NK60Z** is an N-channel MOSFET manufactured by **STMicroelectronics**.

The STN1NK60Z is an N-channel MOSFET manufactured by STMicroelectronics. Below are the factual specifications, descriptions, and features:

Key Specifications:

  • Drain-Source Voltage (VDSS): 600V
  • Continuous Drain Current (ID): 1A
  • Pulsed Drain Current (IDM): 4A
  • Power Dissipation (PD): 30W
  • Gate-Source Voltage (VGS): ±30V
  • On-Resistance (RDS(on)): 10Ω (max) @ VGS = 10V
  • Threshold Voltage (VGS(th)): 3V (min), 5V (max)
  • Input Capacitance (Ciss): 25pF (typ)
  • Output Capacitance (Coss): 5pF (typ)
  • Reverse Transfer Capacitance (Crss): 2pF (typ)
  • Turn-On Delay Time (td(on)): 10ns (typ)
  • Turn-Off Delay Time (td(off)): 35ns (typ)
  • Operating Temperature Range: -55°C to +150°C

Description:

The STN1NK60Z is a 600V N-channel MOSFET designed for high-voltage switching applications. It features low gate charge and fast switching performance, making it suitable for power supplies, lighting, and motor control applications.

Features:

  • High voltage capability (600V)
  • Low gate charge for fast switching
  • Low on-resistance (RDS(on))
  • Avalanche ruggedness
  • 100% avalanche tested
  • Lead-free and RoHS compliant

Package:

  • TO-92 (Through-hole package)

This MOSFET is optimized for efficiency and reliability in high-voltage circuits.

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