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VN5E010MH Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
VN5E010MHST280Yes

VN5E010MH** is a power MOSFET manufactured by **STMicroelectronics (ST)**.

The VN5E010MH is a power MOSFET manufactured by STMicroelectronics (ST). Below are its key specifications, descriptions, and features:

Manufacturer:

STMicroelectronics (ST)

Specifications:

  • Type: N-channel Power MOSFET
  • Drain-Source Voltage (VDSS): 60V
  • Continuous Drain Current (ID): 10A
  • Pulsed Drain Current (IDM): 40A
  • RDS(on) (Max): 0.05Ω (at VGS = 10V)
  • Gate-Source Voltage (VGS): ±20V
  • Power Dissipation (PD): 40W
  • Operating Temperature Range: -55°C to +175°C
  • Package: PowerSSO-12

Descriptions:

  • The VN5E010MH is a single N-channel MOSFET designed for high-efficiency power switching applications.
  • It features low on-resistance (RDS(on)) and fast switching performance, making it suitable for DC-DC converters, motor control, and power management circuits.
  • The PowerSSO-12 package provides enhanced thermal performance and compact PCB footprint.

Features:

  • Low RDS(on) for reduced conduction losses.
  • High current capability (10A continuous, 40A pulsed).
  • Avalanche ruggedness for improved reliability.
  • Optimized for high-frequency switching applications.
  • ESD protection for robustness in harsh environments.

This MOSFET is commonly used in automotive, industrial, and consumer electronics applications where efficient power handling is required.

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