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MK45H04N-12 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
MK45H04N-12ST432Yes

MK45H04N-12** is a high-voltage N-channel power MOSFET manufactured by **STMicroelectronics (ST)**.

The MK45H04N-12 is a high-voltage N-channel power MOSFET manufactured by STMicroelectronics (ST). Below are its key specifications, descriptions, and features:

Specifications:

  • Type: N-Channel Power MOSFET
  • Drain-Source Voltage (VDSS): 450V
  • Continuous Drain Current (ID): 4A
  • Pulsed Drain Current (IDM): 16A
  • Power Dissipation (PD): 35W
  • Gate-Source Voltage (VGS): ±30V
  • On-Resistance (RDS(on)): 1.2Ω (max) at VGS = 10V
  • Turn-On Delay Time (td(on)): 10ns (typical)
  • Turn-Off Delay Time (td(off)): 35ns (typical)
  • Total Gate Charge (Qg): 8nC (typical)
  • Operating Junction Temperature (TJ): -55°C to +150°C
  • Package: TO-220

Descriptions:

  • Designed for high-voltage switching applications in power supplies, motor control, and inverters.
  • Features low gate charge and fast switching characteristics.
  • Suitable for energy-efficient designs due to low on-resistance.

Features:

  • High-voltage capability (450V)
  • Low gate drive requirements
  • Fast switching performance
  • Avalanche ruggedness
  • Low thermal resistance
  • TO-220 package for easy mounting

This MOSFET is optimized for switching power supplies, DC-DC converters, and motor control circuits.

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