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2SA1015-GR Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
2SA1015-GRTOS1149Yes

2SA1015-GR** is a PNP bipolar junction transistor (BJT) manufactured by **Toshiba (TOS)**.

The 2SA1015-GR is a PNP bipolar junction transistor (BJT) manufactured by Toshiba (TOS). Below are its key specifications, descriptions, and features:

Specifications:

  • Transistor Type: PNP
  • Maximum Collector-Base Voltage (VCBO): -50V
  • Maximum Collector-Emitter Voltage (VCEO): -50V
  • Maximum Emitter-Base Voltage (VEBO): -5V
  • Collector Current (IC): -150mA
  • Total Power Dissipation (PT): 400mW
  • Junction Temperature (TJ): 125°C
  • DC Current Gain (hFE): 70 to 400 (GR grade)
  • Transition Frequency (fT): 80MHz
  • Package Type: TO-92

Descriptions:

  • The 2SA1015-GR is a general-purpose PNP transistor designed for amplification and switching applications.
  • It is part of Toshiba’s 2SA1015 series, with the GR suffix indicating its gain classification (hFE range: 70–400).
  • Suitable for low-power circuits, audio amplifiers, and signal processing.

Features:

  • High current gain (hFE) for improved amplification.
  • Low noise performance, making it suitable for audio applications.
  • Compact TO-92 package, ideal for space-constrained designs.
  • Wide operating temperature range, ensuring reliability in various environments.

This transistor is commonly used in conjunction with its complementary NPN counterpart, the 2SC1815, in push-pull amplifier circuits.

(Note: Always refer to the official Toshiba datasheet for precise details before use.)

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