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2SA509 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
2SA509TOS200Yes

2SA509** is a PNP silicon transistor manufactured by **Toshiba**.

The 2SA509 is a PNP silicon transistor manufactured by Toshiba. Below are the factual specifications, descriptions, and features:

Manufacturer:

  • Toshiba (TOS)

Type:

  • PNP Silicon Transistor

Key Specifications:

  • Collector-Base Voltage (VCBO): -50V
  • Collector-Emitter Voltage (VCEO): -50V
  • Emitter-Base Voltage (VEBO): -5V
  • Collector Current (IC): -0.5A
  • Power Dissipation (PC): 0.5W
  • Transition Frequency (fT): 100MHz (typical)
  • DC Current Gain (hFE): 60–320 (depending on operating conditions)
  • Operating Temperature Range: -55°C to +150°C

Package:

  • TO-92 (Plastic Encapsulation)

Features:

  • High Voltage Capability
  • Low Leakage Current
  • Designed for General-Purpose Amplification & Switching Applications

Typical Applications:

  • Audio Amplifiers
  • Signal Processing Circuits
  • Switching Circuits

This information is based on Toshiba's original datasheet for the 2SA509 transistor. For exact performance characteristics, refer to the official manufacturer documentation.

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