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2SK30A Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
2SK30ATOS639Yes

2SK30A** is a **N-channel JFET (Junction Field-Effect Transistor)** manufactured by **Toshiba (TOS)**.

The 2SK30A is a N-channel JFET (Junction Field-Effect Transistor) manufactured by Toshiba (TOS). Below are its specifications, descriptions, and features based on official datasheets:

Key Specifications:

  • Type: N-channel JFET (Depletion mode)
  • Maximum Drain-Source Voltage (VDS): 30V
  • Maximum Gate-Source Voltage (VGS): ±30V
  • Maximum Drain Current (ID): 1mA to 6.5mA (depending on grade)
  • Power Dissipation (PD): 200mW
  • Gate-Source Cutoff Voltage (VGS(off)): -0.5V to -6.0V (varies by grade)
  • Input Capacitance (Ciss): 4.5pF (typical)
  • Output Capacitance (Coss): 2.5pF (typical)
  • Reverse Transfer Capacitance (Crss): 1.5pF (typical)
  • Operating Temperature Range: -55°C to +125°C

Available Grades:

  • GR (Low IDSS): 1.2mA to 3.0mA
  • BL (Standard IDSS): 2.6mA to 6.5mA

Features:

  • Low noise performance
  • High input impedance
  • Suitable for small-signal amplification
  • Low distortion characteristics
  • Available in TO-92 package

Applications:

  • Low-noise amplifiers
  • Analog switches
  • Impedance converters
  • Oscillators

This information is based on Toshiba's official datasheet for the 2SK30A JFET.

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